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| Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
  收藏 | 浏览/下载：72/4 | 提交时间：2011/07/05
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| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏 | 浏览/下载：75/2 | 提交时间：2010/05/24
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| Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui)
收藏 | 浏览/下载：66/0 | 提交时间：2010/08/17
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| Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者: Zhang SM ; Yang H; Yang H; Wang YT; Zhu JJ
收藏 | 浏览/下载：73/0 | 提交时间：2010/03/08
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| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者: Yang H; Jiang DS; Zhao DG; Zhang SM; Yang H
收藏 | 浏览/下载：91/41 | 提交时间：2010/03/08
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| Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏 | 浏览/下载：40/0 | 提交时间：2010/03/29
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| Pressure-induced Raman-active radial breathing mode transition in single-wall carbon nanotubes 期刊论文
physical review b, 2007, 卷号: 75, 期号: 4, 页码: art.no.045425
Yang W; Wang RZ; Song XM; Wang B; Yan H
收藏 | 浏览/下载：92/0 | 提交时间：2010/03/29
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| Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233
Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun)
收藏 | 浏览/下载：37/0 | 提交时间：2010/03/29
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| Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏 | 浏览/下载：31/0 | 提交时间：2010/04/11
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| Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏 | 浏览/下载：26/0 | 提交时间：2010/04/11
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