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科研机构
半导体研究所 [11]
内容类型
期刊论文 [9]
会议论文 [2]
发表日期
2010 [5]
2008 [1]
2007 [1]
2006 [2]
1998 [2]
学科主题
光电子学 [11]
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Effective recombination velocity of textured surfaces
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin)
;
Lu SL (Lu Shulong)
;
Jiang DS (Jiang Desheng)
;
Dong JR (Dong Jianrong)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:119/3
  |  
提交时间:2010/06/04
carrier lifetime
numerical analysis
semiconductor thin films
surface recombination
surface texture
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:110/2
  |  
提交时间:2010/04/22
metalorganic chemical vapor deposition
Al1-xInxN
gradual variation in composition
optical reflectance spectra
X-RAY-DIFFRACTION
PHASE EPITAXY
RELAXATION
FILMS
HETEROSTRUCTURES
SEPARATION
DYNAMICS
ALLOYS
REGION
LAYERS
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Qiu YX (Qiu Y. X.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/12/12
InGaN
Dislocation
Metalorganic chemical vapor deposition
High resolution X-ray diffraction
Cathodoluminescence
MISFIT DISLOCATIONS
QUANTUM-WELLS
BAND-GAP
EPILAYERS
GENERATION
ALLOYS
INN
Frequency-Pushing Effect in Single-Mode Diode Laser Subject to External Dual-Beam Injection
期刊论文
ieee journal of quantum electronics, 2010, 卷号: 46, 期号: 5, 页码: 796-803
作者:
Wang LX
;
Ke JH
收藏
  |  
浏览/下载:68/6
  |  
提交时间:2011/07/05
Dual lasers
four-wave mixing
frequency-pushing effect
injection-locked diode laser
optical frequency conversion
SMALL-SIGNAL ANALYSIS
CAVITY SEMICONDUCTOR-LASERS
OPTICAL-INJECTION
NONLINEAR DYNAMICS
LIGHT INJECTION
CONVERSION
LOCKING
MODULATION
BANDWIDTH
FEEDBACK
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
期刊论文
thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Wang H (Wang H.)
;
Jiang DS (Jiang D. S.)
;
Jahn U (Jahn U.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Liu ZS (Liu Z. S.)
;
Zhang SM (Zhang S. M.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:60/2
  |  
提交时间:2010/08/17
Gallium Nitride
Indium Gallium Nitride
Cathodeluminescence
X-ray Diffraction
Metal-Organic Chemical Vapor Deposition
High-temperature AlN interlayer for crack-free AlGaN growth on GaN
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q
;
Wang, JT
;
Wang, H
;
Jin, RQ
;
Jiang, DS
;
Zhu, JJ
;
Zhao, DG
;
Yang, H
;
Zhou, SQ
;
Wu, MF
;
Smeets, D
;
Vantomme, A
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
STRESS
SI(111)
REDUCTION
THICKNESS
Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers
期刊论文
physica e-low-dimensional systems & nanostructures, 2007, 卷号: 39, 期号: 2, 页码: 203-208
作者:
Xu B
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/03/29
rate equation model
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:
Zhang SM
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  |  
浏览/下载:83/0
  |  
提交时间:2010/04/11
nitrides
multiple quantum wells
cracks
dislocations
vacancies x-ray diffraction
X-RAY-DIFFRACTION
EDGE DISLOCATIONS
GAN
FILMS
SUPERLATTICES
RELAXATION
STRAIN
Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 8, 页码: art.no.083104
Sun BQ (Sun Baoquan)
;
Jiang DS (Jiang Desheng)
;
Sun Z (Sun Zheng)
;
Ruan XZ (Ruan Xuezhong)
;
Deng JJ (Deng Jiajun)
;
Zhao JH (Zhao Jianhua)
;
Ji Y (Ji Yang)
;
Xu ZY (Xu Zhongying)
收藏
  |  
浏览/下载:87/0
  |  
提交时间:2010/04/11
CDTE/CD1-XMNXTE QUANTUM-WELLS
SEMICONDUCTOR HETEROSTRUCTURES
LARMOR PRECESSION
MN2+ MOMENTS
DYNAMICS
POLARONS
SPECTROSCOPY
ORGANIZATION
CD1-XMNXSE
CARRIERS
Dynamics of formation of defects in annealed InP
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Han YJ
;
Liu XL
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/10/29
defects formation
hydrogen related defects
semi-insulating
InP
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