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科研机构
半导体研究所 [11]
内容类型
期刊论文 [9]
会议论文 [2]
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2011 [1]
2009 [2]
2008 [1]
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光电子学 [11]
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A practical route towards fabricating GaN nanowire arrays
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:
Zhang SM
;
Yang H
;
Yang H
;
Wang YT
;
Zhu JJ
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
QUANTUM DOTS
BAND-GAP
GROWTH
SURFACES
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:
Yang H
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:91/41
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
ELECTRON-TRANSPORT
BAND-GAP
FILMS
SAPPHIRE
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
HVPE
GaN
nitridation
polarity
etching
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Jahn U (Jahn Uwe)
;
Jiang DS (Jiang De-Sheng)
;
Ploog KH (Ploog Klaus H.)
;
Wang XL (Wang Xiaolan)
;
Zhao DG (Zha0 Degang)
;
Yang H (Yang, Hui)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Strain evolution in GaN layers grown on high-temperature AlN interlayers
期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.)
;
Yao DZ (Yao D. Z.)
;
Chen J (Chen J.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Jiang DS (Jiang D. S.)
;
Yang H (Yang H.)
;
Liang JW (Liang J. W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
STRESS EVOLUTION
DEFECT STRUCTURE
EPITAXIAL GAN
THIN-FILMS
ALGAN
DISLOCATIONS
RELAXATION
REDUCTION
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers
期刊论文
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.)
;
Zhao DG (Zhao D. G.)
;
Li XY (Li X. Y.)
;
Gong HM (Gong H. M.)
;
Yang H (Yang H.)
;
Liang JW (Liang J. W.)
收藏
  |  
浏览/下载:108/0
  |  
提交时间:2010/04/11
AlGaN
LT AlN
TAXRD
dislocation
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng)
;
Zhang BS (Zhang Bao-Shun)
;
Zhang JC (Zhang Ji-Cai)
;
Zhu JJ (Zhu Jian-Jun)
;
Wang YT (Wang Yu-Tian)
;
Chen J (Chen Jun)
;
Liu W (Liu Wei)
;
Jiang DS (Jiang De-Sheng)
;
Yao DZ (Yao Duan-Zheng)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
ALN BUFFER LAYER
NUCLEATION LAYER
PHASE EPITAXY
EVOLUTION
DENSITY
SILICON
STRESS
SI
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272
Huang Y (Huang Y.)
;
Wang H (Wang H.)
;
Sun Q (Sun Q.)
;
Chen J (Chen J.)
;
Li DY (Li D. Y.)
;
Zhang JC (Zhang J. C.)
;
Wang JF (Wang J. F.)
;
Wang YT (Wang Y. T.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
growth mode
X-ray diffraction
metalorganic chemical vapor deposition
indium nitride
X-RAY-DIFFRACTION
THREADING DISLOCATIONS
ELECTRON-TRANSPORT
BUFFER LAYER
THIN-FILMS
GAN FILMS
SAPPHIRE
ALN
In situ annealing during the growth of relaxed SiGe
会议论文
conference on optical and infrared thin films, san diego, ca, 36739
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
SiGe
Refractive High Energy Electron Diffraction
tansmission electron microscopy
Double Crystal X-Ray Diffraction
MOBILITY 2-DIMENSIONAL ELECTRON
CRITICAL THICKNESS
STRAINED LAYERS
GE
RELAXATION
EPILAYERS
SI1-XGEX
GESI/SI
GASES
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