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CORC

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Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
Cathodoluminescence study of GaN-based film structures 期刊论文
journal of materials science-materials in electronics, 2008, 卷号: 19, 页码: s58-s63 suppl. 1
作者:  Yang H;  Zhao DG;  Zhu JJ;  Zhang SM;  Yang H
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106
作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/29
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29

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