Cathodoluminescence study of GaN-based film structures

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	Cathodoluminescence study of GaN-based film structures
	Yang H; Zhao DG; Zhu JJ; Zhang SM; Yang H; Jiang DS
刊名	journal of materials science-materials in electronics
	2008
卷号	19 页码:s58-s63 suppl. 1
ISSN号	0957-4522
通讯作者	jiang, ds, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn
中文摘要	gan films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (elog) layers with an array of rhombic shaped mask area as well as ingan/gan mqw laser diode layer structures were investigated by cathodoluminescence (cl) spectroscopy and cl imaging at room and low temperatures. the microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in elog gan films. the secondary electron and cl data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p - n junction, providing important information on the defects and carrier dynamics in laser diode devices.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6390]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Zhao DG,Zhu JJ,et al. Cathodoluminescence study of GaN-based film structures[J]. journal of materials science-materials in electronics,2008,19:s58-s63 suppl. 1.
APA	Yang H,Zhao DG,Zhu JJ,Zhang SM,Yang H,&Jiang DS.(2008).Cathodoluminescence study of GaN-based film structures.journal of materials science-materials in electronics,19,s58-s63 suppl. 1.
MLA	Yang H,et al."Cathodoluminescence study of GaN-based film structures".journal of materials science-materials in electronics 19(2008):s58-s63 suppl. 1.