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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文 physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463 Yan, Jianchang; Wang, Junxi; Cong, Peipei; Sun, Lili; Liu, Naixin; Liu, Zhe; Zhao, Chao; Li, Jinmin 收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14 Atomic force microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic chemical vapor deposition  Organic chemicals  Organic light emitting diodes(OLED)  Organometallics  Structure(composition)  Ultraviolet radiation  X ray diffraction   Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22 metalorganic chemical vapor deposition  Al1-xInxN  gradual variation in composition  optical reflectance spectra  X-RAY-DIFFRACTION  PHASE EPITAXY  RELAXATION  FILMS  HETEROSTRUCTURES  SEPARATION  DYNAMICS  ALLOYS  REGION  LAYERS   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文 thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.) 收藏  |  浏览/下载：60/2  |  提交时间：2010/08/17 Gallium Nitride  Indium Gallium Nitride  Cathodeluminescence  X-ray Diffraction  Metal-Organic Chemical Vapor Deposition   Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文 journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144 Lin, T; Zheng, K; Wang, CL; Ma, XY 收藏  |  浏览/下载：37/3  |  提交时间：2010/03/08 diffusion  metalorganic vapor phase epitaxy  semiconducting III-V materials  laser diodes   Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD 期刊论文 journal of crystal growth, 2006, 卷号: 295, 期号: 1, 页码: 40370 Liu JP (Liu J. P.); Shen GD (Shen G. D.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Yang H (Yang H.) 收藏  |  浏览/下载：19/0  |  提交时间：2010/04/11 metal organic chemical vapor deposition  violet light-emitting diodes  AlInGaN quaternary alloy  QUATERNARY ALINGAN EPILAYERS  EMISSION  GAN   Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 growth mode  X-ray diffraction  metalorganic chemical vapor deposition  indium nitride  X-RAY-DIFFRACTION  THREADING DISLOCATIONS  ELECTRON-TRANSPORT  BUFFER LAYER  THIN-FILMS  GAN FILMS  SAPPHIRE  ALN   Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 477-484 作者:  Ye XL;  Liang S;  Pan JQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 bimodal size distribution  metalorganic vapor phase epitaxy  self-assembled quantum dots  indium arsenide  PHASE-EPITAXY  ISLANDS  INGAAS  SIZE  LASER