QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文 journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46 Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM 收藏  |  浏览/下载：71/4  |  提交时间：2011/07/05 Thermal stability  Molecular beam epitaxy  Germanium tin alloys  Germanium  MOLECULAR-BEAM EPITAXY  LOW-TEMPERATURE  SEMICONDUCTORS  GE(001)2X1   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：89/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912 Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko) 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文 journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：108/4  |  提交时间：2010/08/12 InAs/GaAs self-organized quantum dots photoluminescence  molecular beam epitaxy  InGaAs capping layer  1.35 MU-M  OPTICAL-PROPERTIES  EMISSION  LAYER