已选(0)清除
条数/页: 排序方式:
|
| GaN基激光器的研制及器件物理 学位论文 博士, 北京: 中国科学院研究生院, 2017 -
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2017/06/01
|
| Crumpled Graphene Triboelectric Nanogenerators: Smaller Devices with Higher Output Performance 期刊论文 Adv. Mater. Technol., 2017, 卷号: 2, 页码: 1700044 (1 of 7) 作者: Huamin Chen; Yun Xu; Lin Bai; Yu Jiang; Jiushuang Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2018/11/30 |
| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:23/0  |  提交时间:2018/11/30 |
| Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文 IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108 作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:29/0  |  提交时间:2018/11/30 |
| The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文 CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337 作者: Gaoqiang Deng; Yuantao Zhang; Zhen Huang; Long Yan; Pengchong Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2018/11/30 |
| The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer 期刊论文 J Mater Sci: Mater Electron, 2017, 卷号: 28, 页码: 6008–6014 作者: Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2018/11/30 |
| Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者: Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:39/0  |  提交时间:2018/07/11 |
| Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文 IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023 作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:27/0  |  提交时间:2018/07/11 |
| Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:33/0  |  提交时间:2018/07/11 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11 |