Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

	Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells
	Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiang Li; Feng Liang
刊名	IEEE JOURNAL OF PHOTOVOLTAICS
	2017
卷号	7 期号:4 页码:1017-1023
学科主题	光电子学
公开日期	2018-07-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28769]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Wei Liu,Degang Zhao,Desheng Jiang,et al. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells[J]. IEEE JOURNAL OF PHOTOVOLTAICS,2017,7(4):1017-1023.
APA	Wei Liu.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Dongping Shi.,...&Mo Li.(2017).Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells.IEEE JOURNAL OF PHOTOVOLTAICS,7(4),1017-1023.
MLA	Wei Liu,et al."Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells".IEEE JOURNAL OF PHOTOVOLTAICS 7.4(2017):1017-1023.