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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High Performance and Excellent Stability of All-Solid-State Electrochromic Devices Based on a Li1.85AlOz Ion Conducting Layer 期刊论文 ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2019, 卷号: 7, 期号: 20, 页码: 17390 作者:  Xie, Lingling;  Zhao, Shuwen;  Zhu, Ying;  Zhang, Qixuan;  Chang, Tianci 收藏  |  浏览/下载：82/0  |  提交时间：2019/12/26 electrochromic  energy saving materials  lithium ion conductor  aluminate-lithium alloy   Off quadrature mach-zehnder modulator biasing 专利 专利号: US10425164, 申请日期: 2019-09-24, 公开日期: 2019-09-24 作者:  ROPE, TODD;  NAGARAJAN, RADHAKRISHNAN L.;  SHANKAR, HARI 收藏  |  浏览/下载：23/0  |  提交时间：2019/12/23 Single-Junction Organic Solar Cell Containing a Fluorinated Heptacyclic Carbazole-Based Ladder-Type Acceptor Affords over 13% Efficiency with Solution-Processed Cross-Linkable Fullerene as an Interfacial Layer 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 34, 页码: 31069-31077 作者:  Chen, Tsung-Wei;  Chang, Chia-Chih;  Hsiao, Yu-Tang;  Chan, ChoonKee;  Hong, Ling 收藏  |  浏览/下载：73/0  |  提交时间：2019/09/30 Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 2, 页码: 950-956 作者:  Li, Yunpeng;  Zhang, Jiawei;  Yang, Jin;  Yuan, Yvzhuo;  Hu, Zhenjia 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 CMOS  IC  oxide semiconductor  thin-film transistor (TFT)   LC Low-pass filter based on through-silicon via 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Wang, Fengjuan;  Huang, Jia;  Yu, Ningmei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 low-pass filter  through-silicon via (TSV)  three-dimensional integrated circuits (3-D IC)   A highly efficient heat-dissipation system using RDL and TTSV array in 3D IC 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Wang, Fengjuan;  Li, Yue;  Yu, Ningmei 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/20 three-dimensional integrated circuits (3-D IC)  thermal through-silicon via (TTSV)  redistribution layer (RDL)  heat-dissipation   An Effective Method of Reducing TSV Thermal Stress by STI 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Wang, Fengjuan;  Qu, Xiaoqing;  Yu, Ningmei 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 Keywords Three-dimensional integrated circuits (3-D IC)  through-silicon via (TSV)  shallow trench isolation (STI)  thermal stress  keep-out zone (KOZ)