QQ客服 官方微博 反馈留言

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie 收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   Advanced Extensible Crossbar Protocol for Connecting Multi-Cores and Shared-Memory on Chip 会议论文 Beijing,China, 2018,6.15-17 作者:  Hongyu,Meng;  Donglin,Wang;  Zijun,Liu;  Yang,Guo 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/06 Interconnect  Crossbar  Multi-cores  Shared-memory   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa) 收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ] 收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27 Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)   All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 12, 页码: 1876-1879 作者:  Yang, Jin;  Yuan, Yuzhuo;  Li, Yunpeng;  Du, Lulu;  Wang, Yiming 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 Static random access memory (SRAM)  complementary inverter  indium  gallium zinc oxide (InGaZnO or IGZO)  tin monoxide (SnO)  thin-film  transistor (TFT)   Write energy optimization for STT-MRAM cache with data pattern characterization 会议论文 2018 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), 2018-01-01 作者:  Xu, Bi;  Zhang, Xiaolong;  Cheng, Yuanqing;  Wang, Zhaohao;  Liu, Dijun 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30 Big data  Cache memory  Dynamic random access storage  Magnetic recording  Magnetic storage  Static random access storage  VLSI circuits  Cache  Data patterns  Low Power  STT-MRAM  Write energy  MRAM devices   Exploring potentials of NAND-like spintronics MRAM for cache design (Invited) 会议论文 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings 作者:  Wu, B.;  Zhang, B.;  Xu, Y.;  Wang, Z.;  Liu, D. 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/30 Budget control  Cache memory  Efficiency  Integrated circuit design  Magnetic recording  Magnetic storage  NAND circuits  Static random access storage  Cache capacity  Integration density  Leakage power  Magnetic random access memory  Operation speed  Power efficiency  Runtime systems  Spin transfer torque  MRAM devices