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非挥发性阻变存储器件及其制备方法 专利
专利号: US10134983, 申请日期: 2018-11-20, 公开日期: 2016-08-11
作者:  刘琦;  刘明;  孙海涛;  张科科;  龙世兵
收藏  |  浏览/下载:34/0  |  提交时间:2019/03/27
Analysis of tail bits generation of multilevel storage in resistive switching memory 期刊论文
Chinese Physics B, 2018
作者:  Liu J(刘璟);  Xu XX(许晓欣);  Chen CB(陈传兵);  Gong TC(龚天成);  Yu ZA(余兆安)
收藏  |  浏览/下载:50/0  |  提交时间:2019/04/12
Organo-Solubility Carbazole-Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties 期刊论文
MACROMOLECULAR CHEMISTRY AND PHYSICS, 2018, 卷号: 219, 期号: 17, 页码: 13
作者:  Yang, Yanhua;  Jin, Pan;  Ding, Shijin;  Chu, Yueying;  Shen, Yingzhong
收藏  |  浏览/下载:27/0  |  提交时间:2018/11/05
Silicon Oxide Electron-Emitting Nanodiodes 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 8, 页码: 6
作者:  Wu, Gongtao;  Li, Zhiwei;  Tang, Zhigiang;  Wei, Dapeng;  Zhang, Gengmin
收藏  |  浏览/下载:30/0  |  提交时间:2018/09/25
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory 期刊论文
IEEE Electron Device Letters, 2018
作者:  Gong TC(龚天成);  Xu XX(许晓欣);  Yu J(余杰);  Dong DN(董大年);  Lv HB(吕杭炳)
收藏  |  浏览/下载:17/0  |  提交时间:2019/04/18
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices 期刊论文
Applied Physics Letters, 2018
作者:  Wu QT(吴全潭);  Writam Banerjee;  Cao JC(曹劲琛);  Ji ZY(姬濯宇);  Li L(李泠)
收藏  |  浏览/下载:21/0  |  提交时间:2019/04/12
Self-Rectifying and Forming-Free Resistive-Switching Device for Resistive-Switching Device for 期刊论文
IEEE Electron Device Letter, 2018
作者:  Luo Q(罗庆);  Zhang XM(张续猛);  Hu Y(胡媛);  Gong TC(龚天成);  Xu XX(许晓欣)
收藏  |  浏览/下载:17/0  |  提交时间:2019/04/10
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects 期刊论文
Advanced Materials, 2018
作者:  Zhao XL(赵晓龙);  Liu Q(刘琦);  Liu S(刘森);  Niu JB(牛洁斌);  Zhang XM(张续猛)
收藏  |  浏览/下载:21/0  |  提交时间:2019/04/10
Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects 期刊论文
Advavced Science, 2018
作者:  xing wu;  kaihao yu;  Dongkyu cha;  Michel Bosman;  Nagarajan Raghavan
收藏  |  浏览/下载:17/0  |  提交时间:2019/04/10
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application 期刊论文
Journal of Physics D: Applied Physics, 2018
作者:  Burt Fowler;  Yaofeng Chang;  Xiaohan Wu;  Xu GB(许高博);  Tingchang Chang
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/20


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