Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

	Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
	Zhao XL(赵晓龙); Liu Q(刘琦); Liu S(刘森); Niu JB(牛洁斌); Zhang XM(张续猛); Wang Y(王艳); Cao RR(曹荣荣); Wang W(王伟); Lv HB(吕杭炳); Long SB(龙世兵)
刊名	Advanced Materials
	2018-02-13
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18926]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhao XL,Liu Q,Liu S,et al. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects[J]. Advanced Materials,2018.
APA	Zhao XL.,Liu Q.,Liu S.,Niu JB.,Zhang XM.,...&Liu M.(2018).Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects.Advanced Materials.
MLA	Zhao XL,et al."Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects".Advanced Materials (2018).