QQ客服 官方微博 反馈留言

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Modeling of evolution process of edge over erosion in copper CMP using frequency components algorithm 会议论文 Shanghai, China, March 13, 2016 - March 14, 2016 作者:  Wu, Lixiao;  Hahn, Sookap;  Yan, Changfeng 收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15 Copper  Linear systems  Polishing  Semiconductor device manufacture  Silicon wafers  Textile printing  Copper CMP  Evolution process  Frequency components  Pattern density  Pattern structure  Polishing processs  Square waves  Wafer patterns   Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture 期刊论文 2016, 2016 刘璇; 葛婕; 杨轶; 宋亦旭; 任天令; LIU Xuan; GE Jie; YANG Yi; SONG Yixu; REN Tianling 收藏  |  浏览/下载：8/0 脉冲宽度对核电磁脉冲烧毁RS触发器效应的影响 期刊论文 2016, 2016 米国浩; 杜正伟; 曹雷团; 吴强; 陈曦; Mi Guohao; Du Zhengwei; Cao Leituan; Wu Qiang; Chen Xi 收藏  |  浏览/下载：3/0 Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE 其他 2016-01-01 Di, Shaoyan; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Transient simulation  Boltzmann transport equation  Transient relaxation time  UTBB MOSFETs  BOLTZMANN TRANSPORT-EQUATION  QUASI-BALLISTIC TRANSPORT  SEMICONDUCTOR-DEVICES  SPHERICAL-HARMONICS  SCATTERING  MOSFETS   Investigation of Scattering Mechanism in Nano-Scale Double Gate In0.53Ga0.47As nMOSFETs by a Deterministic BTE Solver 其他 2016-01-01 Di, Shaoyan; Lun, Zhiyuan; Chang, Pengying; Shen, Lei; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Boltzmann transport equation (BTE)  InGaAs  double gate  scattering  MOSFETS  SEMICONDUCTORS  TRANSPORT   Extended Hydrodynamic Models and Multigrid Solver of a Silicon Diode Simulation 其他 2016-01-01 Hu, Zhicheng; Li, Ruo; Qiao, Zhonghua 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Boltzmann transport equation  extended hydrodynamic model  moment-dependent relaxation time  multigrid  semiconductor device simulation  REGULARIZED MOMENT METHOD  GLOBALLY HYPERBOLIC REGULARIZATION  BOUNDARY-CONDITIONS  BOLTZMANN-EQUATION  DEVICE SIMULATIONS  CARRIER TRANSPORT  SEMICONDUCTORS  SYSTEM  ELECTRONS  APPROXIMATIONS   Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array 期刊论文 NANOTECHNOLOGY, 2016 Chen, Zhe; Li, Haitong; Chen, Hong-Yu; Chen, Bing; Liu, Rui; Huang, Peng; Zhang, Feifei; Jiang, Zizhen; Ye, Hongfei; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Wong, H-S Philip; Yu, Shimeng 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 resistance disturbance  resistive random access memory (RRAM)  half-selected (HS) cells  cross-point array  SPICE simulation  RRAM  MODEL  DEVICE   A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory 期刊论文 SCIENCE CHINA-INFORMATION SCIENCES, 2016 Lun, Zhiyuan; Du, Gang; Zhao, Kai; Liu, Xiaoyan; Wang, Yi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 charge trapping memory  semiconductor device modeling  2-D charge transport  3-D NAND flash  device modeling and simulation  DEVICES  RETENTION  IMPACT   Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 期刊论文 CHINESE PHYSICS B, 2016 Zhang, Li-Zhong; Wang, Yuan; He, Yan-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 electrostatic discharge (ESD)  diode-triggered silicon controlled rectifier (DTSCR)  transmission-line-pulsing (TLP)  mathematical modeling  ESD PROTECTION   High power microwave effect of electrostatic discharge type GGMOS protection device 期刊论文 Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2016, 卷号: 28 作者:  Huang, Zhijuan;  Liu, Meiqin;  Gong, Ding;  Li, Yong;  Yang, Zhiqiang 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26 Electrostatic discharge device  High power microwave  MOSFET  Numerical simulation  Semiconductor