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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2015    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Metal organic chemical vapor deposition growth and characterization of InAs/GaSb type-II superlattices on GaAs(001) substrates 期刊论文 material letter, 2015, 卷号: 143, 页码: 223–225 ZhenDong Ning; Shuman Liu; Fei Ren; Fengjiao Wang; Lijun Wang; Fengqi Liu; Zhanguo Wang; Liancheng Zhao 收藏  |  浏览/下载：22/0  |  提交时间：2016/03/23 Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文 solid state communications, 2015, 卷号: 224, 页码: 34-36 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shuai Luo; Haiming Ji; Tao Yang 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/23 Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文 applied physics letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/23 Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um 期刊论文 ieee photonics technology letters, 2015, 卷号: 27, 期号: 21, 页码: 2276-2279 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：17/0  |  提交时间：2016/03/23 Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence 期刊论文 applied physics letters, 2015, 卷号: 106, 页码: 103104 Hai-Ming Ji; Baolai Liang; Paul J. Simmonds; Bor-Chau Juang; Tao Yang; Robert J. Young; Diana L.Huffaker 收藏  |  浏览/下载：26/0  |  提交时间：2016/03/22