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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2015    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An organic-inorganic hybrid perovskite logic gate for better computing 期刊论文 JOURNAL OF MATERIALS CHEMISTRY C, 2015 Lin, Guoming; Lin, Yuanwei; Cui, Rongli; Huang, Huan; Guo, Xihong; Li, Cheng; Dong, Jinquan; Guo, Xuefeng; Sun, Baoyun 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 RESISTIVE SWITCHING MEMORIES  NONVOLATILE MEMORY  MEMRISTIVE DEVICES  SOLAR-CELLS  PHOTODETECTORS  HETEROACENE   Carbon Electrode-Molecule Junctions: A Reliable Platform for Molecular Electronics 期刊论文 ACCOUNTS OF CHEMICAL RESEARCH, 2015 Jia, Chuancheng; Ma, Bangjun; Xin, Na; Guo, Xuefeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 DEVICES  TRANSPORT  GRAPHENE  DNA  RECTIFIERS  DESIGN   A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2015 Wu, Gongtao; Wei, Xianlong; Zhang, Zhiyong; Chen, Qing; Peng, Lianmao 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  HOT-ELECTRON TRANSISTOR  BAND-GAP  HETEROSTRUCTURES  TRANSPORT   A learnable parallel processing architecture towards unity of memory and computing 期刊论文 SCIENTIFIC REPORTS, 2015 Li, H.; Gao, B.; Chen, Z.; Zhao, Y.; Huang, P.; Ye, H.; Liu, L.; Liu, X.; Kang, J. 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 RANDOM-ACCESS MEMORY  RESISTIVE SWITCHING MEMORIES  CONDUCTIVE FILAMENT  DEVICES  OPERATIONS  MODEL  RRAM   Low-power, high-speed dual modulus prescalers based on branch-merged true single-phase clocked scheme 期刊论文 electronics letters, 2015 Jia, Song; Yan, Shilin; Wang, Yuan; Zhang, Ganggang 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 analogue-digital conversion  digital-analogue conversion  energy-efficient capacitor-splitting DAC scheme  SAR ADC accuracy  digital-to-analogue converter  successive approximation register analogue-to-digital converter  split-capacitive-array DAC structure  energy-efficient-up transition  switching energy reduction  area reduction  third-reference voltage  least significant bit  FREQUENCY-DIVIDER   Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment 其他 2015-01-01 Chen, Ji; Lou, Jen-Chung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03