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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2013     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric 期刊论文 ieee电子器件汇刊, 2013 Xiao, Xiang; Deng, Wei; He, Xin; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Amorphous indium-gallium-zinc oxide (a-IGZO)  gate dielectric  inductively coupled plasma chemical vapor deposition (ICP-CVD)  low temperature  thin-film transistors (TFTs)  AMORPHOUS OXIDE SEMICONDUCTORS  MOBILITY   Effect of O-2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced V-th Shift of a-IGZO TFTs 期刊论文 ieee电子器件汇刊, 2013 Xiao, Xiang; Deng, Wei; Chi, Shipeng; Shao, Yang; He, Xin; Wang, Longyan; Zhang, Shengdong 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/11 Amorphous indium-gallium-zinc-oxide (a-IGZO)  donor-like states  instability  O-2 flow rate  thin film transistors (TFTs)  FILM TRANSISTORS  MOBILITY  VOLTAGE   Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films 期刊论文 固体薄膜, 2013 Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/13 Amorphous indium gallium zinc oxide  Direct current sputtering  Radio-frequency sputtering  Oxygen vacancy  Fermi level  Work function   The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors 期刊论文 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 7 作者:  Li Shuai-Shuai;  Liang Chao-Xu;  Wang Xue-Xia;  Li Yan-Hui;  Song Shu-Mei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/23 amorphous indium gallium zinc oxide  thin-film transistor  active layer