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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2013    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09 High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805 Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/26 Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704 Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/26 Magnetic and Gilbert damping properties of L21-Co2FeAl film grown by molecular beam epitaxy 期刊论文 applied physics letters, 2013, 卷号: 103, 期号: 15, 页码: 152402 Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Huo, Yan; Wu, Yizheng; Zhang, Xinhui 收藏  |  浏览/下载：20/0  |  提交时间：2014/03/26 Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates 期刊论文 advanced materials research, 2013, 卷号: 787, 页码: 143-147 Rui Ting Hao; Jie Guo; Shu Kang Deng; Ying Liu; Yan Mei Miao; Ying Qiang Xu 收藏  |  浏览/下载：27/0  |  提交时间：2015/03/25 Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy 期刊论文 acta physica sinica, 2013, 卷号: 62, 期号: 17, 页码: 178103 Nie Shuai-Hua, Zhu Li-Jun, Pan Dong, Lu Jun, Zhao Jian-Hua 收藏  |  浏览/下载：13/0  |  提交时间：2014/03/26 In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文 nanoscale research letters, 2013, 卷号: 8, 期号: 1, 页码: 86 Li MF(李密锋) 收藏  |  浏览/下载：10/0  |  提交时间：2013/06/03 InAs quantum dots  Sacrificed InAs layer  Molecular beam epitaxy  Reflection high-energy electron   Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy 期刊论文 journal of materials science and technology, 2013, 卷号: 29, 期号: 12, 页码: 1134-1138 Liu, Yunyan; Yang, Shanying; Wei, Gongxiang; Pan, Jiaoqing; Yuan, Yuzhen; Cheng, Chuanfu 收藏  |  浏览/下载：21/0  |  提交时间：2014/04/30 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong 收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08 Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy 期刊论文 superlattices and microstructures, 2013, 卷号: 64, 页码: 543 Su, SJ; Zhang, DL; Zhang, GZ; Xue, CL; Cheng, BW 收藏  |  浏览/下载：16/0  |  提交时间：2014/04/04