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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 发表日期：2013    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Origin of the transition voltage in gold-vacuum-gold atomic junctions 期刊论文 nanotechnology, 2013 Wu, Kunlin; Bai, Meilin; Sanvito, Stefano; Hou, Shimin 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 MOLECULAR ELECTRONIC DEVICES  TRANSPORT  SPECTROSCOPY  WIRES  STATES   Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric 期刊论文 ieee electron device letters, 2013 Meng, Di; Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Wang, Jinyan; Hao, Yilong; Zhang, Yaohui; Lau, Kei May; Wu, Wengang 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 AlGaN/GaN  cutoff frequency  metal oxide semiconductor high electron mobility transistor (MOSHEMT)  thermal oxidized TiO2  FIELD-EFFECT TRANSISTORS  AL2O3  LAYER  HEMTS   Effect of O-2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced V-th Shift of a-IGZO TFTs 期刊论文 ieee电子器件汇刊, 2013 Xiao, Xiang; Deng, Wei; Chi, Shipeng; Shao, Yang; He, Xin; Wang, Longyan; Zhang, Shengdong 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/11 Amorphous indium-gallium-zinc-oxide (a-IGZO)  donor-like states  instability  O-2 flow rate  thin film transistors (TFTs)  FILM TRANSISTORS  MOBILITY  VOLTAGE   Two-Transistor Current-Biased Voltage-Programmed AM-OLED Pixel 期刊论文 ieee electron device letters, 2013 Leng, Chuanli; Wang, Longyan; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Active matrix-organic light emitting diode (AM-OLED)  current-biased voltage-programmed (CBVP)  pixel circuits  thin film transistors (TFTs)  AMOLED DISPLAYS  SCHEMES  CIRCUIT  SI   Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover 期刊论文 physical review b, 2013 Churchill, H. O. H.; Fatemi, V.; Grove-Rasmussen, K.; Deng, M. T.; Caroff, P.; Xu, H. Q.; Marcus, C. M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/16 QUANTUM COMPUTATION  MAJORANA FERMIONS  SIGNATURE  ANYONS   Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode 期刊论文 chinese physics letters, 2013 Liu Rui; Qiu Gang; Chen Bing; Gao Bin; Kang Jin-Feng 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/13 DIFFUSION BARRIER   A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation 期刊论文 日本应用物理学杂志, 2013 Hong, Jie; He, Yandong; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 V-T EXTRACTOR  TRANSISTORS   Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX 期刊论文 ieee电子器件汇刊, 2013 Yang, Yunxiang; Markov, Stanislav; Cheng, Binjie; Zain, Anis Suhaila Mohd; Liu, Xiaoyan; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Back-gate bias  line edge roughness (LER)  metal gate granularity (MGG)  random dopant fluctuation (RDF)  statistical variability (SV)  thin buried oxide (BOX)  INTRINSIC PARAMETER FLUCTUATIONS  SIMULATION  DECANANOMETER  IMPACT   A Simple circuit to investigate threshold voltage variation and its application in monitoring negative bias temperature instability degradation 其他 2013-01-01 Hong, Jie; He, Yandong; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Novel Gate-Voltage-Bias Techniques for Gate-Coupled MOS (GCMOS) ESD Protection Circuits 其他 2013-01-01 Lu, Guangyi; Wang, Yuan; Cao, Jian; Jia, Song; Zhang, Ganggang; Zhang, Xing 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13