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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301 作者:  Liu XF;  Yan GG;  Zheng L;  Dong L 收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05 4H-SiC  Raman scattering  LOPC modes  transport properties  SILICON-CARBIDE  LIGHT  GAP   Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001 Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Chemical vapor deposition  Deposition  Electric resistance  Epitaxial growth  Film growth  Sheet resistance  Silicon carbide  Silicon wafers