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浏览/检索结果: 共34条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.69 作者:  Song HP;  Wei HY;  Li CM;  Jiao CM 收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05 CATHODOLUMINESCENCE CHARACTERIZATION  GALLIUM NITRIDE  STRESSES  LAYERS  HETEROSTRUCTURE  DEPOSITION  CONSTANTS  MECHANISM  SAPPHIRE  STRAIN   Effect of gas pressure on the properties of silicon thin film 期刊论文 gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491 Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo 收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Deposition  Microcrystalline silicon  Microstructure  Photoelectricity  Plasma deposition  Plasma enhanced chemical vapor deposition  Pressure effects  Semiconducting silicon compounds  Transport properties   MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者:  Jia CH;  Song HP 收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05 Anisotropy  Crystal morphology  Metalorganic chemical vapor deposition  a-Plane InN  INDIUM NITRIDE  MOVPE GROWTH  CUBIC INN  SAPPHIRE  GAN  MBE   Enhanced absorption in nanocrystalline silicon thin film solar cells using surface plasmon polaritons 期刊论文 icmree2011 - proceedings 2011 international conference on materials for renewable energy and environment, 2011, 卷号: 1, 页码: 242-246 Hao, Huiying; Li, Weimin; Xing, Jie; Fan, Zhenjun, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Absorption  Electromagnetic wave polarization  Energy gap  Gold  Light absorption  Nanostructured materials  Optical properties  Particle optics  Phonons  Photons  Plasmons  Quantum theory  Scattering  Semiconducting silicon compounds  Silicon solar cells  Silver  Solar absorbers  Solar energy  Surface plasmon resonance  Surfaces  Thin films   Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103 作者:  Wei HY 收藏  |  浏览/下载：59/8  |  提交时间：2011/07/05 SENSITIZED SOLAR-CELLS  PHOTOCATALYZED TRANSFORMATION  CHLOROAROMATIC DERIVATIVES  ZINC-OXIDE  FILMS  POWDER  PHENOL   Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文 cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13 Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo 收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Amorphous films  Chemical vapor deposition  Energy gap  High resolution electron microscopy  High resolution transmission electron microscopy  Hydrogen  Nanocrystalline silicon  Optical band gaps  Plasma deposition  Plasma enhanced chemical vapor deposition  Raman spectroscopy  Semiconducting silicon compounds  Solar power generation  Thin films  Transmission electron microscopy   Photorefractive effects in ZnO nanorod doped liquid crystal cell 期刊论文 applied optics, 2011, 卷号: 50, 期号: 8, 页码: 1101-1104 作者:  Guo YB 收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05 HOLOGRAPHIC GRATING FORMATION  LUMINESCENCE  FIELDS  FILMS   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者:  Duan RF 收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE   Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708 作者:  Zhang XW 收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05 UV ELECTROLUMINESCENCE  THIN-FILMS  ZNO