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科研机构
半导体研究所 [20]
内容类型
期刊论文 [20]
发表日期
2011 [20]
学科主题
半导体材料 [20]
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发表日期:2011
学科主题:半导体材料
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:
Yang T
;
Yang XG
;
Wang KF
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  |  
浏览/下载:63/2
  |  
提交时间:2011/07/05
HIGH-DENSITY
TEMPERATURE-DEPENDENCE
SELF-FORMATION
LAYERS
WELL
MBE
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
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浏览/下载:53/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
Fabrication and property investigation of the highly ordered TiO2 nanotube arrays
期刊论文
gao xiao hua xue gong cheng xue bao/journal of chemical engineering of chinese universities, 2011, 卷号: 25, 期号: 3, 页码: 507-512
Lan, Yu-Wei
;
Zhou, Li-Ya
;
Tong, Zhang-Fa
;
Pang, Qi
;
Leng, Li-Min
;
Han, Jian-Peng
;
Wang, Fan
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  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Anodic oxidation
Azo dyes
Degradation
Ethylene
Ethylene glycol
Fabrication
Mercury(metal)
Photocatalysis
Photodegradation
Scanning electron microscopy
Titanium
Titanium dioxide
X ray diffraction
X ray diffraction analysis
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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浏览/下载:80/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
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  |  
浏览/下载:94/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Design and fabrication of a1-by-4 multimode interference splitter based on InP
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8307, 页码: 83072m
Li, Ma
;
Zhang, Can
;
Zhu, Hongliang
;
Chen, Minghua
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  |  
浏览/下载:16/0
  |  
提交时间:2012/06/14
Bandwidth
Integrated optics
Textile fibers
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
期刊论文
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S
;
Kong DH
;
Zhu HL
;
Wang W
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  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
SURFACE MIGRATION
FABRICATION
GAAS(100)
ISLANDS
WIRES
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