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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 One-pot synthesis, optical property and self-assembly of monodisperse silver nanospheres 期刊论文 journal of solid state chemistry, 2011, 卷号: 184, 期号: 8, 页码: 1956-1962 Tang AW; Qu SC; Hou YB; Teng F; Wang YS; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2011/09/14 LIGHT-EMITTING-DIODES  NANOCRYSTAL SUPERLATTICES  GOLD NANOPARTICLES  AG NANOPARTICLES  ORGANIZATION  MONOLAYERS  NANODISKS  NANORODS  2D   Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708 作者:  Zhang XW 收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05 UV ELECTROLUMINESCENCE  THIN-FILMS  ZNO   High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文 electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191- Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/06 LIGHT-EMITTING-DIODES  SPECTRUM   Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion 期刊论文 organic electronics, 2011, 卷号: 12, 期号: 12, 页码: 2090-2094 Guan M (Guan Min); Li LS (Li LinSen); Cao GH (Cao GuoHua); Zhang Y (Zhang Yang); Wang BQ (Wang BaoQiang); Chu XB (Chu Xinbo); Zhu ZP (Zhu ZhanPing); Zeng YP (Zeng YiPing) 收藏  |  浏览/下载：26/0  |  提交时间：2012/02/22 Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009 Wang, Liancheng; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong 收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14 Gallium nitride  Leakage currents  Light emission  Light emitting diodes  Metallizing  Polarization  Testing  Water analysis   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108 Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH 收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE   Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 241111 Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM 收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06 ALGAN/GAN HETEROSTRUCTURES  TRANSPORT-PROPERTIES   Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110 Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M. 收藏  |  浏览/下载：24/0  |  提交时间：2012/06/14 Electron injection  Gallium alloys  Gallium nitride  Light  Light emission  Organic light emitting diodes(OLED)  Polarization   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文 ieee international conference on group iv photonics gfp, 2011, 卷号: 32, 期号: 11, 页码: 114007 Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Diodes  Electrostatic devices  Electrostatic discharge  Gallium alloys  Gallium nitride  Light emission