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浏览/检索结果: 共20条，第1-10条 帮助 限定条件 发表日期：2010    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Analysis on the high luminous flux white light from GaN-based laser diode 期刊论文 applied physics b-lasers and optics, 2010, 卷号: 98, 期号: 1, 页码: 83-86 Xu Y; Hu H; Chen L; Song G; Zhuang W 收藏  |  浏览/下载：278/95  |  提交时间：2010/03/08 EMITTING-DIODES   Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers 期刊论文 ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289 Zhu NH (Zhu Ning Hua); Xu GZ (Xu Gui Zhi); Hofmann W (Hofmann Werner); Chen W (Chen Wei); Bohm G (Boehm Gerhard); Liu; Y (Liu Yu); Wang X (Wang Xin); Xie L (Xie Liang); Amann MC (Amann Markus-Christian) 收藏  |  浏览/下载：119/1  |  提交时间：2010/06/04 Equivalent-circuit model  optical modulation  scattering parameters  semiconductor lasers  vertical-cavity surface-emitting lasers (VCSELs)   Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124211 作者:  Wang H;  Yang H;  Yang H;  Jiang DS;  Zhao DG 收藏  |  浏览/下载：41/2  |  提交时间：2011/07/05 InGaN  laser diode  delay effect  saturable absorber  traps  LIGHT EMISSION   Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 12, 页码: art. no. 124501 Xiong KL (Xiong Kanglin); He W (He Wei); Lu SL (Lu Shulong); Zhou TF (Zhou Taofei); Jiang DS (Jiang Desheng); Wang RX (Wang Rongxin); Qiu K (Qiu Kai); Dong JR (Dong Jianrong); Yang H (Yang Hui) 收藏  |  浏览/下载：23/0  |  提交时间：2010/08/17 RESISTANCE  RECIPROCITY  DIODE   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 104007-1-104007-5 作者:  Chen Lianghui 收藏  |  浏览/下载：11/0  |  提交时间：2011/08/16 AlGaInP LED with surface structure of two-dimensional photonic crystal 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8083-8087 Chen YX (Chen Yi-Xin); Zheng WH (Zheng Wan-Hua); Chen W (Chen Wei); Chen LH (Chen Liang-Hui); Tang YD (Tang Yi-Dan); Shen GD (Shen Guang-Di) 收藏  |  浏览/下载：33/0  |  提交时间：2010/12/27 AlGaInP LED  photonic crystal  light extraction efficiency  luminous intensity  LIGHT-EMITTING-DIODES  ENHANCEMENT  EXTRACTION  EFFICIENCY   表面为二维光子晶体结构的AlGaInP系发光二极管的研究 期刊论文 物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8083-8087 作者:  陈良惠;  陈微 收藏  |  浏览/下载：19/0  |  提交时间：2011/08/16 Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   Fabrication of a novel silica PLC hybrid integrated triplexer 期刊论文 chinese optics letters, 2010, 卷号: 8, 期号: 6, 页码: 588-590 Li JY (Li Junyi); An JM (An Junming); Wu YD (Wu Yuanda); Li JG (Li Jianguang); Wang HJ (Wang Hongjie); Hu XW (Hu Xiongwei) 收藏  |  浏览/下载：75/15  |  提交时间：2010/07/05 DESIGN