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| Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者: Zhu JJ ; Zhang SM ; Jiang DS ; Zhao DG ; Yang H
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:191/56  |  提交时间:2010/03/08
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| Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
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| Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403 作者: Li JB ; Hou QF![](/image/person.jpg)
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| Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104 作者: Wang LJ; Yang H; Jiang DS ; Zhao DG ; Zhang SM![](/image/person.jpg)
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| Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101 作者: Wei HY ; Jiao CM ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:236/41  |  提交时间:2010/03/08
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| Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN 期刊论文 japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001 作者: Hao GD![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:129/28  |  提交时间:2010/03/08
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| Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system 期刊论文 physical review b, 2009, 卷号: 80, 期号: 19, 页码: art.no.193301 Luo HH (Luo Haihui); Qian X (Qian Xuan); Ruan XZ (Ruan Xuezhong); Ji Y (Ji Yang); Umansky V (Umansky Vladimir)
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| Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文 superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者: Zhang ML![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:162/57  |  提交时间:2010/03/08
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| Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者: Qian X![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:82/7  |  提交时间:2010/03/08
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