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| Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157 作者: Wei TB; Wei XC; Duan RF 收藏  |  浏览/下载:84/6  |  提交时间:2010/03/08
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| Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284 作者: Ye XL; Liang S 收藏  |  浏览/下载:32/4  |  提交时间:2010/03/08
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| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载:65/25  |  提交时间:2010/03/08
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| The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503 Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载:55/1  |  提交时间:2010/03/08
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| Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415 作者: Jia CH 收藏  |  浏览/下载:173/14  |  提交时间:2010/03/08
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| Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727 Zhao H; Wang SM; Zhao QX; Sadeghi M; Larsson A 收藏  |  浏览/下载:180/35  |  提交时间:2010/03/08
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| Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 2, 页码: 278-281 作者: Song HP; Jiao CM; Wei HY 收藏  |  浏览/下载:199/82  |  提交时间:2010/03/08
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| Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文 materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者: Zhao J 收藏  |  浏览/下载:43/4  |  提交时间:2011/07/05
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| Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文 japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001 作者: Wei XC; Duan RF; Ding K 收藏  |  浏览/下载:76/19  |  提交时间:2010/03/08
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