QQ客服 官方微博 反馈留言

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2008     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells 期刊论文 2008 Lin, GJ; Lai, HK; Li, C; Chen, SY; Yu, JZ; 李成 收藏  |  浏览/下载：3/0  |  提交时间：2013/12/12 INFRARED PHOTODETECTORS  HOLE  TRANSITIONS   Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells 期刊论文 2008 Lin, G. J.; Lai, H. K.; Li, C.; Chen, S. Y.; Yu, J. Z.; 陈松岩 收藏  |  浏览/下载：4/0  |  提交时间：2013/12/12 INFRARED PHOTODETECTORS  HOLE  TRANSITIONS   Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition 期刊论文 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 作者:  Zhong, Li;  Ma, Xaoyu 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Tensile strain  Gaasp/gainp  Photoluminescence  Quantum well  Laser diodes  Lp-mocvd   Study of valence intersubband absorption in tensile strained si/sige quantum wells 期刊论文 Chinese physics b, 2008, 卷号: 17, 期号: 9, 页码: 3479-3483 作者:  Lin Gui-Jiang;  Lai Hong-Kai;  Li Cheng;  Chen Song-Yan;  Yu Jin-Zhong 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Si/sige  Tensile strain  Effective mass  Valence intersubband transition   Semiconductor laser element having tensile-strained quantum-well active layer 专利 专利号: US7362786, 申请日期: 2008-04-22, 公开日期: 2008-04-22 作者:  ASANO, HIDEKI 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/26 Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector 期刊论文 http://dx.doi.org/10.1088/0268-1242/23/3/035011, 2008 Jiang, Lin Gui; Kai, Lai Hong; Cheng, Li; Yan, Chen Song; Zhong, Yu Jin; 李成 收藏  |  浏览/下载：9/0  |  提交时间：2015/07/22 INTERSUBBAND ABSORPTION  DARK CURRENT  HOLE  BAND  DETECTOR  SEMICONDUCTORS  SUPERLATTICE  PERFORMANCE  TRANSITION   Preliminary design of a tensile-strained p-type si/sige quantum well infrared photodetector 期刊论文 Semiconductor science and technology, 2008, 卷号: 23, 期号: 3, 页码: 5 作者:  Jiang, Lin Gui;  Kai, Lai Hong;  Cheng, Li;  Yan, Chen Song;  Zhong, Yu Jin 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Buried type semiconductor laser 专利 专利号: US20080049805A1, 申请日期: 2008-02-28, 公开日期: 2008-02-28 作者:  TAKIGUCHI, TOHRU;  WATATANI, CHIKARA 收藏  |  浏览/下载：0/0  |  提交时间：2020/01/18 High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 3, 页码: art. no. 035011 Jiang LG; Kai LH; Cheng L; Yan CS; Zhong YJ 收藏  |  浏览/下载：72/3  |  提交时间：2010/03/08 INTERSUBBAND ABSORPTION