| Study of valence intersubband absorption in tensile strained si/sige quantum wells | |
| Lin Gui-Jiang1; Lai Hong-Kai1; Li Cheng1; Chen Song-Yan1; Yu Jin-Zhong1,2 | |
| 刊名 | Chinese physics b
 |
| 2008-09-01 | |
| 卷号 | 17期号:9页码:3479-3483 |
| 关键词 | Si/sige Tensile strain Effective mass Valence intersubband transition |
| ISSN号 | 1674-1056 |
| 通讯作者 | Lin gui-jiang(xinghun1201@sohu.com) |
| 英文摘要 | The hole subband structures and effective masses of tensile strained si/si(1-y)ge(y) quantum wells are calculated by using the 6x6 k.p method. the results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained si/si(0.55)ge(0.45) quantum well grown on a relaxed si(0.5)ge(0.5) (100) substrates shows a large absorption coefficient of 8400 cm(-1). |
| WOS关键词 | INFRARED PHOTODETECTORS ; HOLE ; TRANSITIONS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000259596000056 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2427183 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lin Gui-Jiang |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin Gui-Jiang,Lai Hong-Kai,Li Cheng,et al. Study of valence intersubband absorption in tensile strained si/sige quantum wells[J]. Chinese physics b,2008,17(9):3479-3483. |
| APA | Lin Gui-Jiang,Lai Hong-Kai,Li Cheng,Chen Song-Yan,&Yu Jin-Zhong.(2008).Study of valence intersubband absorption in tensile strained si/sige quantum wells.Chinese physics b,17(9),3479-3483. |
| MLA | Lin Gui-Jiang,et al."Study of valence intersubband absorption in tensile strained si/sige quantum wells".Chinese physics b 17.9(2008):3479-3483. |
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