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Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载:51/5  |  提交时间:2010/03/08
Enhanced performance of p-GaN by Mg delta doping 期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 1, 页码: 7-10
Wang HB (Wang Huaibing); Liu JP (Liu Jianping); Niu NH (Niu Nanhui); Shen GD (Shen Guangdi); Zhang SM (Zhang Shuming)
收藏  |  浏览/下载:55/0  |  提交时间:2010/03/29
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载:56/0  |  提交时间:2010/03/29
STRESS  
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106
作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM
收藏  |  浏览/下载:52/0  |  提交时间:2010/03/29
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载:47/0  |  提交时间:2010/03/29
Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate 期刊论文
applied physics a-materials science & processing, 2007, 卷号: 89, 期号: 1, 页码: 177-181
Sun J; Chen J; Wang X; Wang J; Liu W; Zhu J; Yang H
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/29
GROWTH  


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