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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2006    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.141104 Zhao L (Zhao L.); Tu XG (Tu X. G.); Zuo YH (Zuo Y. H.); Chen SW (Chen S. W.); Wang QM (Wang Q. M.) 收藏  |  浏览/下载：23/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  INPLANE OPTICAL ANISOTROPY  LAYER SUPERLATTICES  WAVE-GUIDES  SIGE  HETEROSTRUCTURES  INTERFACES  MODULATOR  SWITCH  MBE   Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586 Cao YL (Cao Yu-Lian); Lian P (Lian Peng); Ma WQ (Ma Wen-Quan); Wang Q (Wang Qing); Wu XM (Wu Xu-Ming); He GR (He Guo-Rong); Li H (Li Hui); Wang XD (Wang Xiao-Dong); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  DIODE-LASERS  INTERFACE CHARACTERISTICS  GROWTH SEQUENCE  MOVPE GROWTH  LP-MOVPE  HETEROSTRUCTURES  HETEROJUNCTION  POWER  NM   Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 3, 页码: 735-737 Shi WH; Mao RW; Zhao L; Luo LP; Wang QM 收藏  |  浏览/下载：74/0  |  提交时间：2010/04/11 SILICON  HETEROSTRUCTURES   Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 Si1_xGex  Ge content  composition determination  double crystals X-ray diffraction (DCXRD)  micro-Raman measurement  BAND-GAP  HETEROSTRUCTURES  SUPERLATTICES  ALLOYS  RELAXATION  SCATTERING  THICKNESS  STRAIN   Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 12, 页码: art.no.121901 Li CB; Cheng BW; Zuo YH; Morrison AP; Yu JZ; Wang QM 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 SI-GE ALLOYS  MULTILAYER STRUCTURE  ROOM-TEMPERATURE  QUANTUM-WELLS  BAND-EDGE  HETEROSTRUCTURES  ISLANDS   Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 8, 页码: art.no.083104 Sun BQ (Sun Baoquan); Jiang DS (Jiang Desheng); Sun Z (Sun Zheng); Ruan XZ (Ruan Xuezhong); Deng JJ (Deng Jiajun); Zhao JH (Zhao Jianhua); Ji Y (Ji Yang); Xu ZY (Xu Zhongying) 收藏  |  浏览/下载：87/0  |  提交时间：2010/04/11 CDTE/CD1-XMNXTE QUANTUM-WELLS  SEMICONDUCTOR HETEROSTRUCTURES  LARMOR PRECESSION  MN2+ MOMENTS  DYNAMICS  POLARONS  SPECTROSCOPY  ORGANIZATION  CD1-XMNXSE  CARRIERS   Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903 作者:  Zhao DG 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 PHOTOLUMINESCENCE  LUMINESCENCE