Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness | |
Wang, Xin; He, Yun-Long; He, Qing; Wang, Chong; Lei, Wei-Ning; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue | |
2019 | |
卷号 | 14页码:184-188 |
关键词 | Annealing Enhancement-Mode AlGaN/GaN/AlGaN HEMT Fluorine Plasma |
ISSN号 | 1555-130X |
DOI | 10.1166/jno.2019.2469 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000456186500006 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4970013 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Wang, Xin,He, Yun-Long,He, Qing,et al. Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness[J],2019,14:184-188. |
APA | Wang, Xin.,He, Yun-Long.,He, Qing.,Wang, Chong.,Lei, Wei-Ning.,...&Hao, Yue.(2019).Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness.,14,184-188. |
MLA | Wang, Xin,et al."Effects of Annealing on Enhancement-Mode AlGaN/GaN/AlGaN Double Heterostructures HEMTs with Different GaN Channel Layer Thickness".14(2019):184-188. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论