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	Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application
	Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming
刊名	NANOTECHNOLOGY
	2018
卷号	29期号:5
关键词	ion implantation negative differential resistance nanoparticles RRAM
ISSN号	0957-4484
DOI	10.1088/1361-6528/aaa065
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3891016
专题	武汉大学
推荐引用方式 GB/T 7714	Wu, Facai,Si, Shuyao,Shi, Tuo,et al. Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application[J]. NANOTECHNOLOGY,2018,29(5).
APA	Wu, Facai.,Si, Shuyao.,Shi, Tuo.,Zhao, Xiaolong.,Liu, Qi.,...&Liu, Ming.(2018).Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application.NANOTECHNOLOGY,29(5).
MLA	Wu, Facai,et al."Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application".NANOTECHNOLOGY 29.5(2018).

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