Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application | |
Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming | |
刊名 | NANOTECHNOLOGY |
2018 | |
卷号 | 29期号:5 |
关键词 | ion implantation negative differential resistance nanoparticles RRAM |
ISSN号 | 0957-4484 |
DOI | 10.1088/1361-6528/aaa065 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3891016 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Wu, Facai,Si, Shuyao,Shi, Tuo,et al. Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application[J]. NANOTECHNOLOGY,2018,29(5). |
APA | Wu, Facai.,Si, Shuyao.,Shi, Tuo.,Zhao, Xiaolong.,Liu, Qi.,...&Liu, Ming.(2018).Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application.NANOTECHNOLOGY,29(5). |
MLA | Wu, Facai,et al."Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application".NANOTECHNOLOGY 29.5(2018). |
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