Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers

	Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers
	Xu SD(徐少东); Dong SX(董升旭); Bai Y(白云); Liu XY(刘新宇); Tang YD(汤益丹)
刊名	Materials Science Forum
	2018-06-05
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18992]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Xu SD,Dong SX,Bai Y,et al. Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers[J]. Materials Science Forum,2018.
APA	Xu SD,Dong SX,Bai Y,Liu XY,&Tang YD.(2018).Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers.Materials Science Forum.
MLA	Xu SD,et al."Study of Temperature-Dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers".Materials Science Forum (2018).