Leakage current estimation of CMOS circuit with stack effect | |
Xu, YJ; Luo, ZY; Li, XW; Li, LJ; Hong, XL | |
刊名 | JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY |
2004-09-01 | |
卷号 | 19期号:5页码:708-717 |
关键词 | computer-aided design leakage current estimation stack effect macromodeling propagation of signal probability |
英文摘要 | Leakage current of CMOS circuit increases dramatically with the technology scaling down and has become a critical issue of high performance system. Subthreshold, gate and reverse biased junction band-to-band tunneling (BTBT) leakages are considered three main determinants of total leakage current. Up to now, how to accurately estimate leakage current of large-scale circuits within endurable time remains unsolved, even though accurate leakage models have been widely discussed. In this paper, the authors first dip into the stack effect of CMOS technology and propose a new simple gate-level leakage current model. Then, a table-lookup based total leakage current simulator is built up according to the model. To validate the simulator, accurate leakage current is simulated at circuit level using popular simulator HSPICE for comparison. Some further studies such as maximum leakage current estimation, minimum leakage current generation and a high-level average leakage current macromodel are introduced in detail. Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage current estimation methods are very accurate and efficient. |
WOS标题词 | Science & Technology ; Technology |
类目[WOS] | Computer Science, Hardware & Architecture ; Computer Science, Software Engineering |
研究领域[WOS] | Computer Science |
关键词[WOS] | DEEP-SUBMICROMETER ; ALGORITHMS ; REDUCTION ; POWER |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000224137200017 |
公开日期 | 2015-12-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.ia.ac.cn/handle/173211/9968] |
专题 | 自动化研究所_09年以前成果 |
作者单位 | 1.Chinese Acad Sci, Inst Comp Technol, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China 3.Tsing Hua Univ, Dept Comp Sci & Technol, Beijing 100084, Peoples R China 4.Chinese Acad Sci, Inst Automat, Natl ASIC Design Engn Ctr, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, YJ,Luo, ZY,Li, XW,et al. Leakage current estimation of CMOS circuit with stack effect[J]. JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,2004,19(5):708-717. |
APA | Xu, YJ,Luo, ZY,Li, XW,Li, LJ,&Hong, XL.(2004).Leakage current estimation of CMOS circuit with stack effect.JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY,19(5),708-717. |
MLA | Xu, YJ,et al."Leakage current estimation of CMOS circuit with stack effect".JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY 19.5(2004):708-717. |
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