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长春光学精密机械与物... [1]
宁波材料技术与工程研... [1]
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期刊论文 [1]
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2020 [1]
2008 [1]
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Chemistry [1]
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A dense graphene monolith with poloxamer prefunctionalization enabling aqueous redispersion to obtain solubilized graphene sheets
期刊论文
CHINESE CHEMICAL LETTERS, 2020, 卷号: 31, 期号: 9, 页码: 2507-2511
作者:
Ye, Chen
;
Zhang, Fan
;
Tan, Xue
;
Sun, Huifang
;
Dai, Wen
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浏览/下载:23/0
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提交时间:2020/12/16
SUPERIOR THERMAL-CONDUCTIVITY
FILMS
HEAT
DISPERSIONS
EXFOLIATION
GRAPHITE
FACILE
GREEN
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.
;
Yang Y.
;
Qin L.
;
Wang C.
;
Yao D.
;
Liu Y.
;
Wang L.
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提交时间:2013/03/25
808nm high power diode lasers
which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems
have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers
and they could lead to new applications where space
weight and electrical power are critical. High efficiency devices generate less waste heat
which means less strain on the cooling system and more tolerance to thermal conductivity variation
a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s
1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars
we fabricate a 1 3 arrays
the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A
the slope efficiency is 3.37 W/A. 2008 SPIE.
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