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CORC

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Theoretical description of the J/psi -> eta(eta ')h(1)(1380), J/psi -> eta(eta ')h(1)(1170) and J/psi -> pi(0)b(1) (1235)(0) reactions 期刊论文
PHYSICAL REVIEW D, 2019, 卷号: 99, 期号: 9, 页码: 94020
作者:  Liang, WH;  Sakai, S;  Oset, E
收藏  |  浏览/下载：0/0  |  提交时间：2019/07/19
a(0)(980) - f(0)(980) mixing in chi(c1) -> pi(0)f(0)(980) -> pi(0)pi(+)pi(-) and chi(c1) -> pi(0) a(0)(980) -> pi(0)pi(0)eta 期刊论文
PHYSICS LETTERS B, 2017, 卷号: 775, 页码: 94-99
作者:  Bayar, M.;  Debastiani, V. R.
收藏  |  浏览/下载：10/0  |  提交时间：2018/05/31
Search for the a(0)(980)-f(0)(980) mixing in weak decays of DS/BS mesons 期刊论文
PHYSICS LETTERS B, 2016, 卷号: 759, 页码: 501-506
作者:  Wang, W
收藏  |  浏览/下载：8/0  |  提交时间：2019/04/08
KD, eta Ds interaction in finite volume and the Ds*0(2317) resonance 期刊论文
Physical Review, 2012, 卷号: Vol.85 No.1
作者:  Torres, AM;  Dai, LR;  Koren, C;  Jido, D;  Oset, E
收藏  |  浏览/下载：1/0  |  提交时间：2019/02/27
Study a(0)(980)-f(0)(980) mixing in charmonium decays 期刊论文
CHINESE PHYSICS C, 2010, 卷号: 34, 期号: 6, 页码: 848-854
作者:  Wu JJ(吴佳俊);  Zhao Q(赵强);  Zou BS(邹冰松);  Wu, JJ;  Zhao, Q
收藏  |  浏览/下载：8/0  |  提交时间：2016/06/28
Study a_0(980)-f_0(980) mixing in charmonium decays 期刊论文
中国物理C, 2010, 期号: 8, 页码: 848-854
作者:  Wu JJ(吴佳俊);  Zhao Q(赵强);  Zou BS(邹冰松)
收藏  |  浏览/下载：3/0  |  提交时间：2015/12/10
a00(980)  f0(980)  mixing  BES  
Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
Yan C.; He C.; Lu G.; Qin L.
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25
By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current  efficiency  emission wavelength  and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived  and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time  the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results  it is shown that the device can still operate at high temperature condition.  

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