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浏览/检索结果: 共19条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文 journal of crystal growth, 2014, 卷号: 396, 页码: 33-37 Du, WN; Yang, XG; Wang, XY; Pan, HY; Ji, HM; Luo, S; Yang, T; Wang, ZG 收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02 Three-region characteristic temperature in p-doped quantum dot lasers 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 4, 页码: 041102 Cao, YL; Ji, HM; Yang, T; Zhang, YH; Ma, WQ; Wang, QJ 收藏  |  浏览/下载：10/0  |  提交时间：2015/03/20 Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文 journal of crystal growth, 2014, 卷号: 395, 页码: 55-60 Wang, XY; Yang, XG; Du, WN; Ji, HM; Luo, S; Yang, T 收藏  |  浏览/下载：14/0  |  提交时间：2015/03/25 Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers 期刊论文 optics letters, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300 Xu, PF; Ji, HM; Xiao, JL; Gu, YX; Huang, YZ; Yang, T 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao) 收藏  |  浏览/下载：18/0  |  提交时间：2013/04/02 High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文 optics letters, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073 Cao YL (Cao, Yulian); Ji HM (Ji, Haiming); Xu PF (Xu, Pengfei); Gu YX (Gu, Yongxian); Ma WQ (Ma, Wenquan); Yang T (Yang, Tao) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201 作者:  Cao YL;  Yang T 收藏  |  浏览/下载：18/0  |  提交时间：2011/07/05 WELL LASERS  DEPENDENCE  DIODE  GAIN   The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/22 Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者:  Yang T;  Yang XG;  Wang KF 收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05 HIGH-DENSITY  TEMPERATURE-DEPENDENCE  SELF-FORMATION  LAYERS  WELL  MBE   Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者:  Yang T 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 PHOTOLUMINESCENCE  EMISSION  INALAS