CORC

浏览/检索结果: 共3条,第1-3条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 外文期刊
2005
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/26
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 外文期刊
2005
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/26
Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 外文期刊
2005
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Li, GH
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/26
Oxides  


©版权所有 ©2017 CSpace - Powered by CSpace