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Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
收藏  |  浏览/下载：27/0  |  提交时间：2019/11/15
Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文
SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497
作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Zesheng Ji
收藏  |  浏览/下载：30/0  |  提交时间：2018/05/23
The immiscibility of InAlN ternary alloy 期刊论文
scientific reports, 2016, 卷号: 6, 页码: 26600
Guijuan Zhao; Xiaoqing Xu; Huijie Li; Hongyuan Wei; Dongyue Han; Zesheng Ji; Yulin Meng; Lianshan Wang; Shaoyan Yang
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10
Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates 期刊论文
nanoscale res lett, 2016, 卷号: 11, 期号: 1, 页码: 270
Huijie Li; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文
scientific reports, 2016, 卷号: 6, 页码: 20787
Guijuan Zhao; Lianshan Wang; Shaoyan Yang; Huijie Li; Hongyuan Wei; Dongyue Han; Zhanguo Wang
收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10
Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 39, 页码: 16481-16492
Huijie Li; Guijuan Zhao; Susu Kong; Dongyue Han; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures 期刊论文
physica e: low-dimensional systems and nanostructures, 2015, 卷号: 66, 页码: 116-119
Huijie Li; Guipeng Liu; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Shaoyan Yang; Zhen Chen; Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/29
X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 13, 页码: 132104
Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua
收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载：26/0  |  提交时间：2014/03/17
Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
crystal research and technology, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan
收藏  |  浏览/下载：18/0  |  提交时间：2013/08/27

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