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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Research on High-Speed Data Acquisition and Real-Time Signal Processing Method Based on Tunable Diode Laser Spectroscopy 其他 2015-01-01 Du, X. F.; Dong, D. M.; Jiao, L. Z.; Han, P. C.; Lang, Y. 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 TDLS  Second harmonic  Multi-channel  High-speed acquisition  MU-M  ABSORPTION   Evaluation of Mobility in Graphene Nanoribbons Including Line Edge Roughness Scattering 其他 2009-01-01 Zeng, Lang; Liu, Xiao Yan; Du, Gang; Kang, Jin Feng; Han, Ru Qi 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 Graphene Nanoribbons  Monte Carlo  scattering  mobility   A Monte Carlo study of ambipolar Schottky barrier MOSFETs 其他 2009-01-01 Lang, Zeng; Xiao, Yan Liu; Gang, Du; Jin, Feng Kang; Ru, Qi Han 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO(2) and ZrO(2): A First Principles Study 其他 2009-01-01 Zhang, Haowei; Gao, Bin; Yu, Shimeng; Lai, Lin; Zeng, Lang; Sun, Bing; Liu, Lifeng; Liu, Xiaoyan; Lu, Jing; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13 Hafnium Oxide  Zirconium Oxide  First Principles Calculation  Ionic Doping Effect  Oxygen Vacancy   A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs 其他 2009-01-01 Zeng, Lang; Liu, Xiao Yan; Du, Gang; Kang, Jin Feng; Han, Ru Qi 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Ambipolar  Monte Carlo  Schottky Barrier  WKB  FIELD-EFFECT TRANSISTORS  SIMULATION   Impact of Gate Misalignment on the Performance of Dopant-Segregated Schottky Barrier MOSFETs 其他 2008-01-01 Zeng, Lang; Liu, Xiao Yan; Du, Gang; Kang, Jin Feng; Han, Ru Qi 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 MONTE-CARLO-SIMULATION  TRANSISTORS   On the Effect of Scattering in Schottky Barrier MOSFETs 其他 2008-01-01 Zeng, Lang; Liu, Xiao Yan; Du, Gang; Kang, Jin Feng; Han, Ru Qi 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 scattering  ballistic transport  Schottky barrier MOSFETs  MONTE-CARLO-SIMULATION  IMPACT-IONIZATION MODEL  ELECTRON-TRANSPORT  CHANNEL   A computational study of dopant-segregated Schottky barrier MOSFETs 其他 2008-01-01 Lang, Zeng; Yu, Ning Zhao; Yu, Hui He; Xiao, Yan Liu; Gang, Du; Jin, Feng Kang; Ru, Qi Han 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 Impact of Gate Misalignment on the Performance of Dopant-Segregated Schottky Barrier MOSFETs 其他 2008-01-01 Lang Zeng; Xiao Yan Liu; Gang Du; Jin Feng Kang; Ru Qi Han 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Schottky  drain  saturation  segregated  dopant  fabrication  enough  maximal  notable  affects  Schottky  drain  saturation  segregated  dopant  fabrication  enough  maximal  notable  affects   Impact of gate overlap on performance of Schottky barrier metal-oxide-semiconductor field-effect transistors including gate induced barrier lowering effect 其他 2008-01-01 Zeng, Lang; Liu, Xiao-Yan; Du, Gang; Kang, Jin-Feng; Han, Ru-Qi 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 gate overlap  image force  Monte Carlo simulation  Schottky barrier lowering  Schottky barrier source/drain metal-oxide-semiconductor  field-effect transistors (SB MOSFETs)  SIMULATION  MOSFETS  LENGTH  NM