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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX 收藏  |  浏览/下载：202/19  |  提交时间：2010/03/29 indium phosphide   Growth of ZnO single crystal by chemical vapor transport method 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhou, JM; Dong, ZY; Wei, XC; Duan, ML; Li, JM 收藏  |  浏览/下载：564/45  |  提交时间：2010/03/29 zinc oxide   Growth of ZnO single crystal by chemical vapor transport method 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40275 作者:  Wei XC 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 zinc oxide  chemical vapor transport  single crystal growth  HYDROTHERMAL METHOD  BULK ZNO  IMPURITIES  DEVICES   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 indium phosphide  defect  semi-insualting  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  SEMI-INSULATING INP  DEEP-LEVEL DEFECTS  FE   Annealing ambient controlled deep defect formation in InP 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：20/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Annealing ambient controlled deep defect formation in InP 期刊论文 european physical journal-applied physics, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN 收藏  |  浏览/下载：360/63  |  提交时间：2010/03/09 FE-DOPED INP   Deep level defects in high temperature annealed InP 期刊论文 science in china series e-engineering & materials science, 2004, 卷号: 47, 期号: 3, 页码: 320-326 Dong ZY; Zhao YM; Zeng YP; Duan ML; Lin LY 收藏  |  浏览/下载：55/15  |  提交时间：2010/03/09 InP   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Effects of growth interruption on self-assembled InAs/GaAs islands 期刊论文 journal of crystal growth, 1998, 卷号: 192, 期号: 1-2, 页码: 97-101 作者:  Han PD 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 InAs/GaAs  islands  MBE  PL  growth interruption  ORGANIZATION  TRANSITION  GAAS  QUANTUM