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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：Physics     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Revisiting B-s -> mu(+) mu(-) in the two-Higgs doublet models with Z(2) symmetry 期刊论文 EUROPEAN PHYSICAL JOURNAL C, 2016, 卷号: 76, 期号: 3, 页码: 151 作者:  Cheng, XD;  Yuan, XB (reprint author), Chinese Acad Sci, Inst Theoret Phys, State Key Lab Theoret Phys, Beijing 100190, Peoples R China.;  Yuan, XB (reprint author), Yonsei Univ, IPAP, Seoul 120749, South Korea.;  Yuan, XB (reprint author), Yonsei Univ, Dept Phys, Seoul 120749, South Korea.;  Cheng, XD (reprint author), Xinyang Normal Univ, Coll Phys & Elect Engn, Xinyang 464000, Henan, Peoples R China. 收藏  |  浏览/下载：12/0  |  提交时间：2017/10/13 Revisiting B-s -> mu(+) mu(-) in the two-Higgs doublet models with Z(2) symmetry 期刊论文 EUROPEAN PHYSICAL JOURNAL C, 2016, 卷号: 76, 期号: 3, 页码: 151 作者:  Cheng, XD;  Yang, YD;  Yuan, XB 收藏  |  浏览/下载：64/0  |  提交时间：2019/04/08 CHARGED HIGGS BOSONS  2-HIGGS-DOUBLET MODEL  STANDARD MODEL  TOP-QUARK  ATLAS DETECTOR  CONSERVATION-LAWS  NEUTRAL CURRENTS  QCD CORRECTIONS  RARE DECAYS  8 TEV   Bs,d - (B)over-bars,d mixings and Bs,d -> l(+)l(-) decays within the Manohar-Wise model 期刊论文 JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS, 2015, 卷号: 42, 期号: 12, 页码: 125005 作者:  Cheng, XD;  Li, XQ;  Yang, YD;  Zhang, X 收藏  |  浏览/下载：17/0  |  提交时间：2016/11/21 B-physics  rare decays  beyond Standard Model   Pressure-induced spin reorientation and spin state transition in SrCoO3 期刊论文 PHYSICAL REVIEW B, 2015, 卷号: 92, 期号: 19, 页码: 195147 作者:  Yang, JY;  Terakura, C;  Medarde, M;  White, JS;  Sheptyakov, D 收藏  |  浏览/下载：22/0  |  提交时间：2016/04/18 Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications 期刊论文 JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 7, 页码: 73723 Cao, X; Li, XM; Gao, XD; Yu, WD; Liu, XJ; Zhang, YW; Chen, LD; Cheng, XH（重点实验室） 收藏  |  浏览/下载：10/0  |  提交时间：2013/05/10 Physics  Applied   Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications 期刊论文 JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 7, 页码: 73723-73723 Cao,X; Li,XM; Gao,XD; Yu,WD; Liu,XJ; Zhang,YW; Chen,LD; Cheng,XH 收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24 NONVOLATILE MEMORY  RESISTANCE  TRANSITION  SRTIO3