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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02 Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 nanoscale research letters, 2012, 卷号: 7, 页码: 434 Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：15/0  |  提交时间：2013/04/02 Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：8/0  |  提交时间：2013/03/27 Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/02 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512 Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H 收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  GAN  DEPENDENCE  CONTACTS  STATES  NI   Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文 solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445 作者:  Liu K;  Tan FR 收藏  |  浏览/下载：87/5  |  提交时间：2011/07/05 Polyaniline  Electrodeposition  Thin films  Buffer layers  Solar cells  PHOTOVOLTAIC CELLS  POLYMER  NANOWIRES  EFFICIENCY   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY