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Method for preparing p-type zinc oxide film, involves using chemical gas phase deposition device in which antimony metal organic compound and zinc diethyl are reacted in chamber by heating underlay in presence of carrier gas. 专利
申请日期: 2008-01-01, 公开日期: 2008-09-03
作者:  HU L LIANG H DU G ZHAO J SUN J BIAN
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