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Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates 期刊论文
ELECTRONICS LETTERS, 2016, 卷号: 52, 期号: 4
作者:  Kang, WH;  Zhang, XD;  Ji, X;  Cai, Y(蔡勇);  Zhou, JH
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