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| 40×Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip 会议论文 作者: Xu XX(许晓欣); Tai L(台路); Gong TC(龚天成); Yin JH(殷嘉浩); Peng Huang 收藏  |  浏览/下载:34/0  |  提交时间:2019/05/13 |
| A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention 会议论文 作者: Tai L(台路); Xu XX(许晓欣); Yuan P(袁鹏); Yu J(余杰); Luo Q(罗庆) 收藏  |  浏览/下载:19/0  |  提交时间:2019/05/13 |
| Analysis of tail bits generation of multilevel storage in resistive switching memory 期刊论文 Chinese Physics B, 2018 作者: Liu J(刘璟); Xu XX(许晓欣); Chen CB(陈传兵); Gong TC(龚天成); Yu ZA(余兆安) 收藏  |  浏览/下载:50/0  |  提交时间:2019/04/12 |
| A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design 期刊论文 IEEE transactions on electron devices, 2018 作者: Zhao Y(赵莹); Fang C(方聪); Zhang XM(张续猛); Gong TC(龚天成); Xu XX(许晓欣) 收藏  |  浏览/下载:22/0  |  提交时间:2019/04/18 |
| 一种自选通阻变存储器件及其制备方法 专利 专利号: CN201610282626.5, 申请日期: 2018-08-10, 公开日期: 2016-08-03 作者: 吕杭炳; 刘明; 许晓欣; 罗庆; 刘琦 收藏  |  浏览/下载:32/0  |  提交时间:2019/03/06 |
| Unveiling the Switching Mechanism of a TaOx/HfO2Self-Selective Cell by Probing the Trap Profiles With RTN Measurements 期刊论文 IEEE Electron Device Letters, 2018 作者: Gong TC(龚天成); Luo Q(罗庆); Lv HB(吕杭炳); Xu XX(许晓欣); Yu J(余杰) 收藏  |  浏览/下载:13/0  |  提交时间:2019/04/12 |
| Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing 期刊论文 SCIENCE CHINA, 2018 作者: Liu Q(刘琦); Zhang XM(张续猛); Luo Q(罗庆); Zhao XL(赵晓龙); Lv HB(吕杭炳) 收藏  |  浏览/下载:14/0  |  提交时间:2019/04/10 |
| The impact of RTN signal on array level resistance fluctuation of resistive random access memory 期刊论文 Electron Device Letters, 2018 作者: Xu XX(许晓欣); Chen CB(陈传兵); Liu J(刘璟); Dong DN(董大年); Yuan P(袁鹏) 收藏  |  浏览/下载:27/0  |  提交时间:2019/04/18 |
| Self-Rectifying and Forming-Free Resistive-Switching Device for Resistive-Switching Device for 期刊论文 IEEE Electron Device Letter, 2018 作者: Luo Q(罗庆); Zhang XM(张续猛); Hu Y(胡媛); Gong TC(龚天成); Xu XX(许晓欣) 收藏  |  浏览/下载:17/0  |  提交时间:2019/04/10 |
| Full imitation of synaptic metaplasticity based on memristor devices 期刊论文 Nanoscale, 2018 作者: Wu QT(吴全潭); Luo Q(罗庆); Writam Banerjee; Cao JC(曹劲琛); Zhang XM(张续猛) 收藏  |  浏览/下载:19/0  |  提交时间:2019/04/12 |