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40×Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip 会议论文
作者:  Xu XX(许晓欣);  Tai L(台路);  Gong TC(龚天成);  Yin JH(殷嘉浩);  Peng Huang
收藏  |  浏览/下载:34/0  |  提交时间:2019/05/13
A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention 会议论文
作者:  Tai L(台路);  Xu XX(许晓欣);  Yuan P(袁鹏);  Yu J(余杰);  Luo Q(罗庆)
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/13
Analysis of tail bits generation of multilevel storage in resistive switching memory 期刊论文
Chinese Physics B, 2018
作者:  Liu J(刘璟);  Xu XX(许晓欣);  Chen CB(陈传兵);  Gong TC(龚天成);  Yu ZA(余兆安)
收藏  |  浏览/下载:50/0  |  提交时间:2019/04/12
A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design 期刊论文
IEEE transactions on electron devices, 2018
作者:  Zhao Y(赵莹);  Fang C(方聪);  Zhang XM(张续猛);  Gong TC(龚天成);  Xu XX(许晓欣)
收藏  |  浏览/下载:22/0  |  提交时间:2019/04/18
一种自选通阻变存储器件及其制备方法 专利
专利号: CN201610282626.5, 申请日期: 2018-08-10, 公开日期: 2016-08-03
作者:  吕杭炳;  刘明;  许晓欣;  罗庆;  刘琦
收藏  |  浏览/下载:32/0  |  提交时间:2019/03/06
Unveiling the Switching Mechanism of a TaOx/HfO2Self-Selective Cell by Probing the Trap Profiles With RTN Measurements 期刊论文
IEEE Electron Device Letters, 2018
作者:  Gong TC(龚天成);  Luo Q(罗庆);  Lv HB(吕杭炳);  Xu XX(许晓欣);  Yu J(余杰)
收藏  |  浏览/下载:13/0  |  提交时间:2019/04/12
Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing 期刊论文
SCIENCE CHINA, 2018
作者:  Liu Q(刘琦);  Zhang XM(张续猛);  Luo Q(罗庆);  Zhao XL(赵晓龙);  Lv HB(吕杭炳)
收藏  |  浏览/下载:14/0  |  提交时间:2019/04/10
The impact of RTN signal on array level resistance fluctuation of resistive random access memory 期刊论文
Electron Device Letters, 2018
作者:  Xu XX(许晓欣);  Chen CB(陈传兵);  Liu J(刘璟);  Dong DN(董大年);  Yuan P(袁鹏)
收藏  |  浏览/下载:27/0  |  提交时间:2019/04/18
Self-Rectifying and Forming-Free Resistive-Switching Device for Resistive-Switching Device for 期刊论文
IEEE Electron Device Letter, 2018
作者:  Luo Q(罗庆);  Zhang XM(张续猛);  Hu Y(胡媛);  Gong TC(龚天成);  Xu XX(许晓欣)
收藏  |  浏览/下载:17/0  |  提交时间:2019/04/10
Full imitation of synaptic metaplasticity based on memristor devices 期刊论文
Nanoscale, 2018
作者:  Wu QT(吴全潭);  Luo Q(罗庆);  Writam Banerjee;  Cao JC(曹劲琛);  Zhang XM(张续猛)
收藏  |  浏览/下载:19/0  |  提交时间:2019/04/12


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