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Ab initio simulation study of defect assisted Zener tunneling in GaAs diode 期刊论文
AIP ADVANCES, 2017, 卷号: 7, 页码: 065302
作者:  Juan Lu;  Zhi-Qiang Fan;  Jian Gong;  Xiang-Wei Jiang
收藏  |  浏览/下载：15/0  |  提交时间：2018/06/15
Co-Nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer：One-Step Growth and Its Defect-Induced Formation Mechanism 期刊论文
ACS Nano, 2016, 卷号: 10, 页码: 8938−8946
Yongtao Li; Le Huang; Bo Li; Xiaoting Wang; Ziqi Zhou; Jingbo Li; Zhongming Wei
收藏  |  浏览/下载：19/0  |  提交时间：2017/03/16
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding 期刊论文
acs nano, 2014, 卷号: 8, 期号: 6, 页码: 5738-5745
Nan, HY; Wang, ZL; Wang, WH; Liang, Z; Lu, Y; Chen, Q; He, DW; Tan, PH; Miao, F; Wang, XR; Wang, JL; Ni, ZH
收藏  |  浏览/下载：51/0  |  提交时间：2015/04/02
Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文
journal of infrared and millimeter waves, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Chen Y (Chen Yan); Deng AH (Deng Ai-Hong); Tang B (Tang Bao); Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：11/0  |  提交时间：2013/04/02
Defect properties of CuCrO2: A density functional theory calculation 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 8, 页码: 087105
Fang ZJ (Fang Zhi-Jie); Zhu JZ (Zhu Ji-Zhen); Zhou J (Zhou Jiang); Mo M (Mo Man)
收藏  |  浏览/下载：17/0  |  提交时间：2013/04/02
Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J
收藏  |  浏览/下载：95/5  |  提交时间：2011/07/05
First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 11, 页码: article no.113114
Jiang JW; Wang BS; Wang JS
收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Donor-donor binding in In2O3: Engineering shallow donor levels 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming); Wang LL (Wang Ling-Ling); Wang D (Wang Dan); Liu JZ (Liu Jian-Zhe); Chen KQ (Chen Ke-Qiu)
收藏  |  浏览/下载：67/0  |  提交时间：2010/05/24

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