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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载:47/0  |  提交时间:2010/12/27
Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped GaAs/AlxGa1-xAs single quantum wells at high magnetic-fields 期刊论文
physical review b, 2001, 卷号: 64, 期号: 16, 页码: art.no.161303
Wang YJ; Leem YA; McCombe BD; Wu XG; Peeters FM; Jones ED; Reno JR; Lee XY; Jiang HW
收藏  |  浏览/下载:93/10  |  提交时间:2010/08/12
Temperature-induced turnover of the well and barrier layers in ZnSe/Zn0.84Mn0.16Se superlattices 期刊论文
physical review b, 1999, 卷号: 60, 期号: 4, 页码: 2691-2696
Zhu ZM; Li GH; Zhang W; Han HX; Wang ZP; Wang J; Wang X
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12


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