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Mid Wavelength Type II InAs/GaSb Superlattice Avalanche Photodiode With AlAsSb Multiplication Layer 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2021, 卷号: 42, 期号: 11, 页码: 1634-1637
作者:  Yan, Shaolong;   Huang, Jianliang;   Zhang, Yanhua;   Ma, Wenquan
收藏  |  浏览/下载：15/0  |  提交时间：2022/03/28
Upside-down InAs/InAs1-xSbx type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier 期刊论文
OPTICS EXPRESS, 2020, 卷号: 28, 期号: 9, 页码: 13616-13624
作者:  Gongrong Deng;   Xinbo Song;   Mingguo Fan;   Tingting Xiao;   Zhibing Luo;   Niu Chen;   Wenyun Yang;   Yiyun Zhang
收藏  |  浏览/下载：11/0  |  提交时间：2021/06/22
Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 145, 页码: 106590
作者:  Ya-nan Du;   Yun Xu;   Guo-feng Song
收藏  |  浏览/下载：8/0  |  提交时间：2021/05/25
A type-II GaSe/HfS 2 van der Waals heterostructure as promising photocatalyst with high carrier mobility 期刊论文
Applied Surface Science, 2020, 卷号: 534, 页码: 147607
作者:  Obeid, MM (Obeid, Mohammed M.);   Bafekry, A (Bafekry, Asadollah);   Rehman, SU (Rehman, Sajid Ur);   Nguyen, CV (Nguyen, Chuong, V)
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/21
Growth Control of High-Performance InAs/GaSb Type-II Superlattices via Optimizing the In/Ga Beam-Equivalent Pressure Ratio* 期刊论文
CHINESE PHYSICS LETTERS, 2020, 卷号: 37, 期号: 3, 页码: 037301
作者:  Da-Hong Su;   Yun Xu;   Wen-Xin Wang;  Guo-Feng Song
收藏  |  浏览/下载：17/0  |  提交时间：2021/12/17
Multiphoton absorption in type-II InAs/GaSb superlattice structure 期刊论文
OPTICS LETTERS, 2020, 卷号: 45, 期号: 1, 页码: 165-168
作者:  Chengcheng Zhao;   Jianliang Huang;   Biying Nie;   Jinchuan Zhang;   Yanhua Zhang;   Wenquan Ma
收藏  |  浏览/下载：14/0  |  提交时间：2021/12/16
Long Wavelength Type II InAs/GaSb Superlattice Photodetector Using Resonant Tunneling Diode Structure 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2020, 卷号: 41, 期号: 1, 页码: 73-75
作者:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Yanhua Zhang;   Wenquan Ma
收藏  |  浏览/下载：13/0  |  提交时间：2021/12/16
Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2020, 卷号: 127, 期号: 1, 页码: 015302
作者:  Weijiang Li;   Xiang Zhang;   Jie Zhao;   Jianchang Yan;   Zhiqiang Liu;   Junxi Wang;   Jinmin Li;   Tongbo Wei
收藏  |  浏览/下载：30/0  |  提交时间：2021/12/16
Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 41, 期号: 1, 页码: 73-75
作者:  Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Yanhua Zhang;   Wenquan Ma
收藏  |  浏览/下载：2/0  |  提交时间：2020/07/30
Multiphoton absorption in type-II InAs/GaSb superlattice structure 期刊论文
Optics Letters, 2019, 卷号: 45, 期号: 1, 页码: 165-168
作者:  Chengcheng Zhao;   Jianliang Huang;   Biying Nie;   Jinchuan Zhang;   Yanhua Zhang;   Wenquan Ma
收藏  |  浏览/下载：8/0  |  提交时间：2020/08/04

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